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4 edition of Secondary ion mass spectrometry, SIMS X found in the catalog.

Secondary ion mass spectrometry, SIMS X

International Conference on Secondary Ion Mass Spectrometry (10th 1995 Muenster, Germany)

Secondary ion mass spectrometry, SIMS X

proceedings of the Tenth International Conference on Secondary Ion Mass Spectrometry (SIMS X), University of Muenster, Muenster, Germany, October 1-6th, 1995

by International Conference on Secondary Ion Mass Spectrometry (10th 1995 Muenster, Germany)

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Published by Wiley in Chichester .
Written in English

    Subjects:
  • Secondary ion mass spectrometry -- Congresses.

  • Edition Notes

    Other titlesSIMS X, Proceedings of the Tenth International Conference on Secondary Ion Mass Spectrometry (SIMS X)
    Statementeditors A. Benninghoven, B. Hagenhoff, H.W. Werner.
    ContributionsBenninghoven, A., Hagenhoff, B., Werner, H. W.
    Classifications
    LC ClassificationsQD96.S43 I58 1995
    The Physical Object
    Paginationxxv, 1057 p. :
    Number of Pages1057
    ID Numbers
    Open LibraryOL20311974M
    ISBN 100471958972
    OCLC/WorldCa36720512

    Serves as a practical reference for those involved in Secondary Ion Mass Spectrometry (SIMS) • Introduces SIMS along with the highly diverse fields (Chemistry, Physics, Geology and Biology) to it is applied using up to date illustrations • Introduces the accepted fundamentals and pertinent models associated with elemental and molecular sputtering and ion emission • Covers the theory and. Buy and Download Individual ChaptersIn the decade following the first edition of this book, TOF-SIMS: materials analysis by Mass Spectrometry has been transformed by the adoption of heavy polyatomic or cluster primary ion sources. Lower damage rates and higher yields of analytically useful secondary ions have benefited all areas of application, especially in medical science, but the ability to.

    A series of NaMoO/SiO catalysts with various loadings of NaMoO have been characterized using secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), FTIR and X-ray diffraction (XRD). Their catalytic activity for methane oxidative coupling (MOC) has been tested. The results revealed some type. Secondary Ion Mass Spectroscopy (SIMS) is a powerful and rapid method for stable isotope analysis. δ 18 O measurements in minerals with high spatial resolution is possible, with ca. 5 minutes per.

    Jan 10,  · This volume contains full proceedings of the Fourth International Conference on Secondary Ion Mass Spectrometry (SIMS-IV), held in the Minoo-Kanko Hotel, Osaka, Japan, from November 13th to 19th, Pages: TOF-SIMS. Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a surface characterization technique which is based upon the liberation and identification of ions that are sputtered from a .


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Secondary ion mass spectrometry, SIMS X by International Conference on Secondary Ion Mass Spectrometry (10th 1995 Muenster, Germany) Download PDF EPUB FB2

Aug 18,  · Paul van der Heide is a recognized leader in surface analysis with emphasis on the application of Secondary Ion Mass Spectrometry (SIMS). This interest started during his PhD (completed in at the University of Auckland) which involved the design and construction of a magnetic sector SIMS instrument.

Secondary Ion Mass Spectrometry. Secondary ion mass spectrometry (SIMS) is a technique capable of providing information about the elemental and isotopic composition of samples in situ from a few micrometers down to the sub-micron scale.

Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface SIMS X book the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions.

The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of Related: Fast atom bombardment, Microprobe.

May 16,  · Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is a surface-sensitive analytical method that uses a pulsed ion beam (Cs or microfocused Ga) to remove molecules from the very outermost surface of the sample. The particles are removed from atomic monolayers on the surface (secondary ions).

May 16,  · As a class, SIMS instruments (aka ion microprobes) use an internally generated beam of either positive (e.g., Cs) or negative (e.g., O) ions (primary beam) focused on a sample surface to generate ions that are then transferred into a mass spectrometer across a high electrostatic potential, and are referred to Secondary ion mass spectrometry secondary ions.

Secondary ion mass spectrometry (SIMS) is based on the observation that charged particles (Secondary Ions) are ejected from a sample surface when bombarded by a primary beam of heavy particles. SECONDARY ION SPUTTERING A basic SIMS instrument will, therefore, consist of.

Secondary ion mass spectrometry. Secondary ion mass spectrometry (SIMS) is a mass spectrometry characterization technique sensitive to surface composition (sampling depth less than 1 μm) and it works in a manner similar to that of XPS. For XPS, the sample is irradiated by X-rays whereas for SIMS, the sample surface is bombarded with a.

This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials.

While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and niarbylbaycafe.com: Sarah Fearn.

A Bennmghoven, K T F Jansen, J Tompner and H W Werner (Eds 1, Secondary Zon Mass Spectrometry SIMS VlZZ, Wiley, Chichester, (ISBN O) xxv + pp Price 00 These Proceeduzgs of the Eighth Zntematumal Conference on Secondary Zon Mass Spectrometry.

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a mass spectrom-etry technique used to analyse the chemistry of materials, in niarbylbaycafe.comgetic beam of primary ions (–20 keV) is used to bombard a sample surface.

The bombarding primary ion produces a. This volume contains contributions presented as plenary,invited and contributed poster and oral presentations at the 11thInternational Conference on Secondary Ion Mass Spectrometry (SIMSXI) held at the Hilton Hotel, Walt Disney World Village, Orlando,Florida, 7 12 September, The book covers a diverse range ofresearch, reflecting the rapid growth in advanced.

Nanoscale secondary ion mass spectrometry (nanoSIMS) is a nanoscopic scale resolution chemical imaging mass spectrometer based on secondary ion mass spectrometry.

It works based on a coaxial optical design of the ion gun and the secondary ion extraction, and on an original magnetic sector mass spectrometer with multicollection.

This volume contains contributions presented as plenary, invited and contributed poster and oral presentations at the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI) held at the Hilton Hotel, Walt Disney World Village, Orlando, Florida, September, Author: Edited by: G.

Gillen. Secondary Ion Mass Spectrometry (SIMS) Secondary Ion Mass Spectrometry (SIMS) detects very low concentrations of dopants and impurities. The technique provides elemental depth profiles over a wide depth range from a few angstroms (Å) to tens of micrometers (µm). This work incorporates the results of 41 years experience in ion implantation and 36 years in secondary ion mass spectrometry (SIMS).

These two technologies became intertwined when the need became apparent for the measurement of depth distributions of elements implanted into many materials under many conditions during and after implantation, for which SIMS was ideally suited, and the.

Secondary ion mass spectrometry (SIMS) is a relatively new technique for surface chemical analysis compared with Auger electron spectroscopy (AES) and X‐ray photoelectron spectroscopy (XPS). SIMS examines the mass of ions, instead of energy of electrons, escaped from a solid surface to obtain information on surface chemistry.

Oct 17,  · niarbylbaycafe.com - Buy Secondary Ion Mass Spectrometry: An Introduction to Principles and Practices book online at best prices in India on niarbylbaycafe.com Read Secondary Ion Mass Spectrometry: An Introduction to Principles and Practices book reviews & author details and more at niarbylbaycafe.com Free delivery on qualified orders.5/5(1).

Glancing-angle X-ray diffraction (GXRD) patterns reveal that the high-voltage PIII process facilitates the formation of expanded austenite phases, and secondary ion mass spectrometry (SIMS) depth.

This volume contains the proceedings of the Fifth International Confer- ence on Secondary Ion Mass Spectrometry (SIMS V), held at the Capitol Holiday Inn, Washington, DC. Dec 02,  · Secondary Ion Mass Spectrometry (SIMS) This feature is not available right now.

Please try again later. Secondary Ion Mass Spectrometry SIMS V Proceedings of the Fifth International Conference, Washington, DC, September 30 – October 4, Search within book. Front Matter. Pages I-XXI. PDF. Retrospective. Front Matter. Secondary Ion Mass Spectrometer with Liquid Metal Field Ion Source and Quadrupole Mass Analyzer.This book is the proceedings of the Sixth International Conference on Secondary Ion Mass Spectrometry (SIMS VI) held in Paris in The sections cover basics, instrumentation, quantification, ion imaging, depth profiling, organics, combined techniques, surfaces, and several applications.

References date from the s to the present.Secondary Ion Mass Spectroscopy (SIMS) Secondary Ion Mass Spectroscopy (SIMS) is a failure analysis technique used in the compositional analysis of a sample. SIMS operates on the principle that bombardment of a material with a beam of ions with high energy ( keV) results in the ejection or sputtering of atoms from the material.